Richard Chang

Lile Cai, Ramanpreet Singh Pahwa, Xun Xu et al.

The development of X-Ray microscopy (XRM) technology has enabled non-destructive inspection of semiconductor structures for defect identification. Deep learning is widely used as the state-of-the-art approach to perform visual analysis tasks. However, deep learning based models require large amount of annotated data to train. This can be time-consuming and expensive to obtain especially for dense prediction tasks like semantic segmentation. In this work, we explore active learning (AL) as a potential solution to alleviate the annotation burden. We identify two unique challenges when applying AL on semiconductor XRM scans: large domain shift and severe class-imbalance. To address these challenges, we propose to perform contrastive pretraining on the unlabelled data to obtain the initialization weights for each AL cycle, and a rareness-aware acquisition function that favors the selection of samples containing rare classes. We evaluate our method on a semiconductor dataset that is compiled from XRM scans of high bandwidth memory structures composed of logic and memory dies, and demonstrate that our method achieves state-of-the-art performance.

Ramanpreet S Pahwa, Soon Wee Ho, Ren Qin et al.

For over 40 years lithographic silicon scaling has driven circuit integration and performance improvement in the semiconductor industry. As silicon scaling slows down, the industry is increasingly dependent on IC package technologies to contribute to further circuit integration and performance improvements. This is a paradigm shift and requires the IC package industry to reduce the size and increase the density of internal interconnects on a scale which has never been done before. Traditional package characterization and process optimization relies on destructive techniques such as physical cross-sections and delayering to extract data from internal package features. These destructive techniques are not practical with today's advanced packages. In this paper we will demonstrate how data acquired non-destructively with a 3D X-ray microscope can be enhanced and optimized using machine learning, and can then be used to measure, characterize and optimize the design and production of buried interconnects in advanced IC packages. Test vehicles replicating 2.5D and HBM construction were designed and fabricated, and digital data was extracted from these test vehicles using 3D X-ray and machine learning techniques. The extracted digital data was used to characterize and optimize the design and production of the interconnects and demonstrates a superior alternative to destructive physical analysis. We report an mAP of 0.96 for 3D object detection, a dice score of 0.92 for 3D segmentation, and an average of 2.1um error for 3D metrology on the test dataset. This paper is the first part of a multi-part report.