Leonid Popryho

Ayoub Sadeghi, Leonid Popryho, Inna Partin-Vaisband

This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems. Conventional TCAD-based approaches are computationally intensive and insufficient for navigating the high-dimensional, nonlinear design space of advanced GaN devices. To address this, a physics-informed active learning framework is used to intelligently guide simulations, accelerating convergence while preserving accuracy. This ML-guided approach enables the discovery of optimal configurations by efficiently exploring key structural parameters -- most notably the GaN-to-AlGaN thickness ratio -- a long-standing focus of debate in device design. By systematically exploring key structural parameters, two optimized devices with aggressively scaled gate-to-drain lengths are identified. Single-fin, multi-channel simulations show that device~D2, with a thinner GaN channel relative to the AlGaN barrier, achieves higher drive current. However, in a 300-fin configuration, device~D1 outperforms device~D2 by delivering 3.3\,A at 0.49~ohm on-resistance -- approximately 2$\times$ better -- despite slightly higher parasitics. Both devices operate in a normally-off mode. Based on an application-specific figure of merit, device~D1 achieves 5\,pC$\cdot$ohm, demonstrating 2$\times$ greater switching efficiency than device~D2, while both designs outperform industrial benchmarks from different performance standpoints.

Mohamed Gharib, Leonid Popryho, Inna Partin-Vaisband

High-density through-substrate vias (TSVs) enable 2.5D/3D heterogeneous integration but introduce significant signal-integrity and thermal-reliability challenges due to electrical coupling, insertion loss, and self-heating. Conventional full-wave finite-element method (FEM) simulations provide high accuracy but become computationally prohibitive for large design-space exploration. This work presents a scalable electro-thermal modeling and optimization framework that combines physics-informed analytical modeling, graph neural network (GNN) surrogates, and full-wave sign-off validation. A multi-conductor analytical model computes broadband S-parameters and effective anisotropic thermal conductivities of TSV arrays, achieving $5\%-10\%$ relative Frobenius error (RFE) across array sizes up to $15x15$. A physics-informed GNN surrogate (TSV-PhGNN), trained on analytical data and fine-tuned with HFSS simulations, generalizes to larger arrays with RFE below $2\%$ and nearly constant variance. The surrogate is integrated into a multi-objective Pareto optimization framework targeting reflection coefficient, insertion loss, worst-case crosstalk (NEXT/FEXT), and effective thermal conductivity. Millions of TSV configurations can be explored within minutes, enabling exhaustive layout and geometric optimization that would be infeasible using FEM alone. Final designs are validated with Ansys HFSS and Mechanical, showing strong agreement. The proposed framework enables rapid electro-thermal co-design of TSV arrays while reducing per-design evaluation time by more than six orders of magnitude.

Anahita Asadi, Leonid Popryho, Inna Partin-Vaisband

Accurately predicting the performance of active radio frequency (RF) circuits is essential for modern wireless systems but remains challenging due to highly nonlinear, layout-sensitive behavior and the high computational cost of traditional simulation tools. Existing machine learning (ML) surrogates often require large datasets to generalize across various topologies or to accurately model skewed and multi-modal performance metrics. In this work, a lightweight, data-efficient, and topology-aware graph neural network (GNN) model is proposed for predicting key performance metrics of multiple topologies of active RF circuits such as low noise amplifiers (LNAs), mixers, voltage-controlled oscillators (VCOs), and PAs. To capture transistor-level symmetry and preserve fine-grained connectivity details, circuits are modeled at the device-terminal level, enabling scalable message passing while reducing data requirements. Masked autoregressive flow (MAF) output heads are incorporated to improve robustness in modeling complex target distributions. Experiments on datasets demonstrate high prediction accuracy, with symmetric mean absolute percentage error (sMAPE) and mean relative error (MRE) averaging 2.40% and 2.91%, respectively. Owing to the pin-level conversion of circuit to graph and ML architecture robust to modeling complex densities of RF metrics, the MRE is improved by 3.14x while using 2.24x fewer training samples compared to prior work, demonstrating the method's effectiveness for rapid and accurate RF circuit design automation.