Sadeed Bin Sayed

2papers

2 Papers

QMMay 4, 2022Code
DeeptDCS: Deep Learning-Based Estimation of Currents Induced During Transcranial Direct Current Stimulation

Xiaofan Jia, Sadeed Bin Sayed, Nahian Ibn Hasan et al.

Objective: Transcranial direct current stimulation (tDCS) is a non-invasive brain stimulation technique used to generate conduction currents in the head and disrupt brain functions. To rapidly evaluate the tDCS-induced current density in near real-time, this paper proposes a deep learning-based emulator, named DeeptDCS. Methods: The emulator leverages Attention U-net taking the volume conductor models (VCMs) of head tissues as inputs and outputting the three-dimensional current density distribution across the entire head. The electrode configurations are also incorporated into VCMs without increasing the number of input channels; this enables the straightforward incorporation of the non-parametric features of electrodes (e.g., thickness, shape, size, and position) in the training and testing of the proposed emulator. Results: Attention U-net outperforms standard U-net and its other three variants (Residual U-net, Attention Residual U-net, and Multi-scale Residual U-net) in terms of accuracy. The generalization ability of DeeptDCS to non-trained electrode configurations can be greatly enhanced through fine-tuning the model. The computational time required by one emulation via DeeptDCS is a fraction of a second. Conclusion: DeeptDCS is at least two orders of magnitudes faster than a physics-based open-source simulator, while providing satisfactorily accurate results. Significance: The high computational efficiency permits the use of DeeptDCS in applications requiring its repetitive execution, such as uncertainty quantification and optimization studies of tDCS.

42.1COMP-PHApr 23
A Thin Sheet Volume Integral Equation Solver for Simulation of Bianisotropic Metasurfaces

Sebastian Celis Sierra, Meruyert Khamitova, Ran Zhao et al.

A thin-sheet (TS) volume integral equation (VIE) formulation incorporating generalized sheet transition conditions (GSTCs) is presented for the simulation of three-dimensional (3D) bianisotropic metasurfaces. The metasurface is represented as an equivalent TS, with its constitutive tensors derived from the GSTC susceptibility tensors. Invoking the TS approximation, the governing VIEs are reduced to surface integral equations (SIEs), in which tangential and normal flux density components are treated as distinct sets of unknowns and discretized using Rao-Wilton-Glisson and pulse basis functions, respectively. In contrast to conventional GSTC approaches based on conventional SIEs, which represent only tangential fields, the proposed framework rigorously enforces the bianisotropic GSTCs, including normal field interactions, while retaining the flux-based VIE character of the formulation. Numerical examples demonstrate the accuracy and robustness of the proposed TS-VIE-GSTC solver for polarization rotation, perfect reflection, multi-directional attenuation, and oblique phase-shift transformation.