Minesh Patel

Aditya Manglik, Minesh Patel, Haiyu Mao et al.

Resistive Random-Access Memory (RRAM) is well-suited to accelerate neural network (NN) workloads as RRAM-based Processing-in-Memory (PIM) architectures natively support highly-parallel multiply-accumulate (MAC) operations that form the backbone of most NN workloads. Unfortunately, NN workloads such as transformers require support for non-MAC operations (e.g., softmax) that RRAM cannot provide natively. Consequently, state-of-the-art works either integrate additional digital logic circuits to support the non-MAC operations or offload the non-MAC operations to CPU/GPU, resulting in significant performance and energy efficiency overheads due to data movement. In this work, we propose NEON, a novel compiler optimization to enable the end-to-end execution of the NN workload in RRAM. The key idea of NEON is to transform each non-MAC operation into a lightweight yet highly-accurate neural network. Utilizing neural networks to approximate the non-MAC operations provides two advantages: 1) We can exploit the key strength of RRAM, i.e., highly-parallel MAC operation, to flexibly and efficiently execute non-MAC operations in memory. 2) We can simplify RRAM's microarchitecture by eliminating the additional digital logic circuits while reducing the data movement overheads. Acceleration of the non-MAC operations in memory enables NEON to achieve a 2.28x speedup compared to an idealized digital logic-based RRAM. We analyze the trade-offs associated with the transformation and demonstrate feasible use cases for NEON across different substrates.

Ataberk Olgun, F. Nisa Bostanci, Ismail Emir Yuksel et al.

State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read disturbance bitflip) to securely and performance- and energy-efficiently prevent read disturbance bitflips. However, accurately and exhaustively characterizing the RDT of every DRAM row in a chip is time intensive. Rapidly determining RDT is important for enabling secure, performance- and energy-efficient systems. Our goal is to develop and evaluate a reliable and rapid read disturbance testing methodology. To that end, we develop DiscoRD building on the key results of an extensive experimental characterization study using 212 real DDR4 chips whereby we measure the RDT of hundreds of thousands of DRAM rows millions of times. We develop an empirical model for read disturbance bitflips and evaluate the probability of read-disturbance-induced uncorrectable errors when a read disturbance mechanism is configured using a single $RDT_{min}$ measurement. Using this model we demonstrate that 1) relying on a lightweight error-correcting code (ECC) alone yields relatively high uncorrectable error probability and 2) combining ECC, infrequent memory scrubbing, and configurable read disturbance mitigation mechanisms can greatly reduce the error probability. Building on our observations and analyses, we discuss the RDT of each individual row can be identified more precisely. Our results show that error tolerance, memory scrubbing, online profiling, and run-time configurable read disturbance mitigation techniques are important to enable secure and energy-efficient spatial-variation aware read disturbance mitigations. We hope that DiscoRD drives research that enables us to quantitatively navigate the performance/cost - reliability tradeoff space for read disturbance mitigation techniques.

Lois Orosa, Abdullah Giray Yağlıkçı, Haocong Luo et al.

RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink. Recent studies demonstrate that modern DRAM chips, including chips previously marketed as RowHammer-safe, are even more vulnerable to RowHammer than older chips such that the required hammer count to cause a bit flip has reduced by more than 10X in the last decade. Therefore, it is essential to develop a better understanding and in-depth insights into the RowHammer vulnerability of modern DRAM chips to more effectively secure current and future systems. Our goal in this paper is to provide insights into fundamental properties of the RowHammer vulnerability that are not yet rigorously studied by prior works, but can potentially be $i$) exploited to develop more effective RowHammer attacks or $ii$) leveraged to design more effective and efficient defense mechanisms. To this end, we present an experimental characterization using 248~DDR4 and 24~DDR3 modern DRAM chips from four major DRAM manufacturers demonstrating how the RowHammer effects vary with three fundamental properties: 1)~DRAM chip temperature, 2)~aggressor row active time, and 3)~victim DRAM cell's physical location. Among our 16 new observations, we highlight that a RowHammer bit flip 1)~is very likely to occur in a bounded range, specific to each DRAM cell (e.g., 5.4% of the vulnerable DRAM cells exhibit errors in the range 70C to 90C), 2)~is more likely to occur if the aggressor row is active for longer time (e.g., RowHammer vulnerability increases by 36% if we keep a DRAM row active for 15 column accesses), and 3)~is more likely to occur in certain physical regions of the DRAM module under attack (e.g., 5% of the rows are 2x more vulnerable than the remaining 95% of the rows).

Lois Orosa, Yaohua Wang, Mohammad Sadrosadati et al.

DRAM is the dominant main memory technology used in modern computing systems. Computing systems implement a memory controller that interfaces with DRAM via DRAM commands. DRAM executes the given commands using internal components (e.g., access transistors, sense amplifiers) that are orchestrated by DRAM internal timings, which are fixed foreach DRAM command. Unfortunately, the use of fixed internal timings limits the types of operations that DRAM can perform and hinders the implementation of new functionalities and custom mechanisms that improve DRAM reliability, performance and energy. To overcome these limitations, we propose enabling programmable DRAM internal timings for controlling in-DRAM components. To this end, we design CODIC, a new low-cost DRAM substrate that enables fine-grained control over four previously fixed internal DRAM timings that are key to many DRAM operations. We implement CODIC with only minimal changes to the DRAM chip and the DDRx interface. To demonstrate the potential of CODIC, we propose two new CODIC-based security mechanisms that outperform state-of-the-art mechanisms in several ways: (1) a new DRAM Physical Unclonable Function (PUF) that is more robust and has significantly higher throughput than state-of-the-art DRAM PUFs, and (2) the first cold boot attack prevention mechanism that does not introduce any performance or energy overheads at runtime.

Ataberk Olgun, Minesh Patel, A. Giray Yağlıkçı et al.

True random number generators (TRNG) sample random physical processes to create large amounts of random numbers for various use cases, including security-critical cryptographic primitives, scientific simulations, machine learning applications, and even recreational entertainment. Unfortunately, not every computing system is equipped with dedicated TRNG hardware, limiting the application space and security guarantees for such systems. To open the application space and enable security guarantees for the overwhelming majority of computing systems that do not necessarily have dedicated TRNG hardware, we develop QUAC-TRNG. QUAC-TRNG exploits the new observation that a carefully-engineered sequence of DRAM commands activates four consecutive DRAM rows in rapid succession. This QUadruple ACtivation (QUAC) causes the bitline sense amplifiers to non-deterministically converge to random values when we activate four rows that store conflicting data because the net deviation in bitline voltage fails to meet reliable sensing margins. We experimentally demonstrate that QUAC reliably generates random values across 136 commodity DDR4 DRAM chips from one major DRAM manufacturer. We describe how to develop an effective TRNG (QUAC-TRNG) based on QUAC. We evaluate the quality of our TRNG using NIST STS and find that QUAC-TRNG successfully passes each test. Our experimental evaluations show that QUAC-TRNG generates true random numbers with a throughput of 3.44 Gb/s (per DRAM channel), outperforming the state-of-the-art DRAM-based TRNG by 15.08x and 1.41x for basic and throughput-optimized versions, respectively. We show that QUAC-TRNG utilizes DRAM bandwidth better than the state-of-the-art, achieving up to 2.03x the throughput of a throughput-optimized baseline when scaling bus frequencies to 12 GT/s.

Abdullah Giray Yağlıkçı, Minesh Patel, Jeremie S. Kim et al.

Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips, including chips previously marketed as RowHammer-safe, are even more vulnerable to RowHammer than older chips. Many works show that attackers can exploit RowHammer bit-flips to reliably mount system-level attacks to escalate privilege and leak private data. Therefore, it is critical to ensure RowHammer-safe operation on all DRAM-based systems. Unfortunately, state-of-the-art RowHammer mitigation mechanisms face two major challenges. First, they incur increasingly higher performance and/or area overheads when applied to more vulnerable DRAM chips. Second, they require either proprietary information about or modifications to the DRAM chip design. In this paper, we show that it is possible to efficiently and scalably prevent RowHammer bit-flips without knowledge of or modification to DRAM internals. We introduce BlockHammer, a low-cost, effective, and easy-to-adopt RowHammer mitigation mechanism that overcomes the two key challenges by selectively throttling memory accesses that could otherwise cause RowHammer bit-flips. The key idea of BlockHammer is to (1) track row activation rates using area-efficient Bloom filters and (2) use the tracking data to ensure that no row is ever activated rapidly enough to induce RowHammer bit-flips. By doing so, BlockHammer (1) makes it impossible for a RowHammer bit-flip to occur and (2) greatly reduces a RowHammer attack's impact on the performance of co-running benign applications. Compared to state-of-the-art RowHammer mitigation mechanisms, BlockHammer provides competitive performance and energy when the system is not under a RowHammer attack and significantly better performance and energy when the system is under attack.

Jeremie S. Kim, Minesh Patel, A. Giray Yaglikci et al.

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM modules (60x DDR3, 110x DDR4, and 130x LPDDR4) with RowHammer protection mechanisms disabled, spanning multiple different technology nodes from across each of the three major DRAM manufacturers. Our studies definitively show that newer DRAM chips are more vulnerable to RowHammer: as device feature size reduces, the number of activations needed to induce a RowHammer bit flip also reduces, to as few as 9.6k (4.8k to two rows each) in the most vulnerable chip we tested. We evaluate five state-of-the-art RowHammer mitigation mechanisms using cycle-accurate simulation in the context of real data taken from our chips to study how the mitigation mechanisms scale with chip vulnerability. We find that existing mechanisms either are not scalable or suffer from prohibitively large performance overheads in projected future devices given our observed trends of RowHammer vulnerability. Thus, it is critical to research more effective solutions to RowHammer.

Lucian Cojocar, Jeremie Kim, Minesh Patel et al.

Cloud providers are concerned that Rowhammer poses a potentially critical threat to their servers, yet today they lack a systematic way to test whether the DRAM used in their servers is vulnerable to Rowhammer attacks. This paper presents an end-to-end methodology to determine if cloud servers are susceptible to these attacks. With our methodology, a cloud provider can construct worst-case testing conditions for DRAM. We apply our methodology to three classes of servers from a major cloud provider. Our findings show that none of the CPU instruction sequences used in prior work to mount Rowhammer attacks create worst-case DRAM testing conditions. To address this limitation, we develop an instruction sequence that leverages microarchitectural side-effects to ``hammer'' DRAM at a near-optimal rate on modern Intel Skylake and Cascade Lake platforms. We also design a DDR4 fault injector that can reverse engineer row adjacency for any DDR4 DIMM. When applied to our cloud provider's DIMMs, we find that DRAM rows do not always follow a linear map.

Lois Orosa, Yaohua Wang, Ivan Puddu et al.

DRAM manufacturers have been prioritizing memory capacity, yield, and bandwidth for years, while trying to keep the design complexity as simple as possible. DRAM chips do not carry out any computation or other important functions, such as security. Processors implement most of the existing security mechanisms that protect the system against security threats, because 1) executing security mechanisms usually require non-trivial computational capabilities (e.g., encryption), and 2) commodity DRAM chips are not designed to perform computations or tasks other than data storage. In this work, we advocate for DRAM as a key component for providing security mechanisms to the system. To this end, we propose Dataplant, a new class of low-cost, high-performance, and reliable security primitives that can be integrated in commodity DRAM chips with minimal changes. The main idea of Dataplant is to slightly modify the internal DRAM timing signals to expose the inherent process variation found in all DRAM chips for generating unpredictable but reproducible values (e.g., keys) within DRAM. We use Dataplant to build two new security mechanisms. First, a new Dataplant-based physical unclonable function (PUF) with non-destructive read-out, low evaluation latency, robust responses, resiliency to temperature changes, and data-independent responses. Second, a new cold boot attack prevention mechanism that automatically destroys all data within DRAM on every power cycle with zero run-time energy and latency overheads. Using a combination of detailed simulations and experiments with 136 real commodity DRAM chips, we show that our Dataplant-based PUF has 1.8x higher throughput than the best state-of-the-art DRAM PUFs. We also demonstrate that our Dataplant-based cold boot attack protection mechanism is 19.5x faster and consumes 2.54x less energy when compared to existing mechanisms.