Yujin Zheng

h-index2
2papers
20citations

2 Papers

14.4LGJan 31, 2025Code
An All-digital 8.6-nJ/Frame 65-nm Tsetlin Machine Image Classification Accelerator

Svein Anders Tunheim, Yujin Zheng, Lei Jiao et al.

We present an all-digital programmable machine learning accelerator chip for image classification, underpinning on the Tsetlin machine (TM) principles. The TM is an emerging machine learning algorithm founded on propositional logic, utilizing sub-pattern recognition expressions called clauses. The accelerator implements the coalesced TM version with convolution, and classifies booleanized images of 28$\times$28 pixels with 10 categories. A configuration with 128 clauses is used in a highly parallel architecture. Fast clause evaluation is achieved by keeping all clause weights and Tsetlin automata (TA) action signals in registers. The chip is implemented in a 65 nm low-leakage CMOS technology, and occupies an active area of 2.7 mm$^2$. At a clock frequency of 27.8 MHz, the accelerator achieves 60.3k classifications per second, and consumes 8.6 nJ per classification. This demonstrates the energy-efficiency of the TM, which was the main motivation for developing this chip. The latency for classifying a single image is 25.4 $μ$s which includes system timing overhead. The accelerator achieves 97.42%, 84.54% and 82.55% test accuracies for the datasets MNIST, Fashion-MNIST and Kuzushiji-MNIST, respectively, matching the TM software models.

4.3ARMay 22, 2023
IMBUE: In-Memory Boolean-to-CUrrent Inference ArchitecturE for Tsetlin Machines

Omar Ghazal, Simranjeet Singh, Tousif Rahman et al.

In-memory computing for Machine Learning (ML) applications remedies the von Neumann bottlenecks by organizing computation to exploit parallelism and locality. Non-volatile memory devices such as Resistive RAM (ReRAM) offer integrated switching and storage capabilities showing promising performance for ML applications. However, ReRAM devices have design challenges, such as non-linear digital-analog conversion and circuit overheads. This paper proposes an In-Memory Boolean-to-Current Inference Architecture (IMBUE) that uses ReRAM-transistor cells to eliminate the need for such conversions. IMBUE processes Boolean feature inputs expressed as digital voltages and generates parallel current paths based on resistive memory states. The proportional column current is then translated back to the Boolean domain for further digital processing. The IMBUE architecture is inspired by the Tsetlin Machine (TM), an emerging ML algorithm based on intrinsically Boolean logic. The IMBUE architecture demonstrates significant performance improvements over binarized convolutional neural networks and digital TM in-memory implementations, achieving up to a 12.99x and 5.28x increase, respectively.