Sumeet Gupta

2papers

2 Papers

ETAug 11, 2024
Approximate ADCs for In-Memory Computing

Arkapravo Ghosh, Hemkar Reddy Sadana, Mukut Debnath et al.

In memory computing (IMC) architectures for deep learning (DL) accelerators leverage energy-efficient and highly parallel matrix vector multiplication (MVM) operations, implemented directly in memory arrays. Such IMC designs have been explored based on CMOS as well as emerging non-volatile memory (NVM) technologies like RRAM. IMC architectures generally involve a large number of cores consisting of memory arrays, storing the trained weights of the DL model. Peripheral units like DACs and ADCs are also used for applying inputs and reading out the output values. Recently reported designs reveal that the ADCs required for reading out the MVM results, consume more than 85% of the total compute power and also dominate the area, thereby eschewing the benefits of the IMC scheme. Mitigation of imperfections in the ADCs, namely, non-linearity and variations, incur significant design overheads, due to dedicated calibration units. In this work we present peripheral aware design of IMC cores, to mitigate such overheads. It involves incorporating the non-idealities of ADCs in the training of the DL models, along with that of the memory units. The proposed approach applies equally well to both current mode as well as charge mode MVM operations demonstrated in recent years., and can significantly simplify the design of mixed-signal IMC units.

ETSep 18, 2024
WAGONN: Weight Bit Agglomeration in Crossbar Arrays for Reduced Impact of Interconnect Resistance on DNN Inference Accuracy

Jeffry Victor, Dong Eun Kim, Chunguang Wang et al.

Deep neural network (DNN) accelerators employing crossbar arrays capable of in-memory computing (IMC) are highly promising for neural computing platforms. However, in deeply scaled technologies, interconnect resistance severely impairs IMC robustness, leading to a drop in the system accuracy. To address this problem, we propose SWANN - a technique based on shuffling weights in crossbar arrays which alleviates the detrimental effect of wire resistance on IMC. For 8T-SRAM-based 128x128 crossbar arrays in 7nm technology, SWANN enhances the accuracy from 47.78% to 83.5% for ResNet-20/CIFAR-10. We also show that SWANN can be used synergistically with Partial-Word-LineActivation, further boosting the accuracy. Moreover, we evaluate the implications of SWANN for compact ferroelectric-transistorbased crossbar arrays. SWANN incurs minimal hardware overhead, with less than a 1% increase in energy consumption. Additionally, the latency and area overheads of SWANN are ~1% and ~16%, respectively when 1 ADC is utilized per crossbar array.