Andriy Zakutayev

Davi Febba, William A. Callahan, Anna Sacchi et al.

We present a Safe Active Learning (SAL) framework for autonomous reliability characterization of rectifying Ga$_2$O$_3$-based devices under coupled thermal and hydrogen stress. SAL treats rectification as a device-physics-motivated safety observable and models its evolution over elapsed time, temperature, and H$_2$ concentration using a Gaussian-process surrogate. To handle condition-dependent and uncertain experiment durations, the method combines an adaptive completion-time window, time-window lower-confidence-bound safety checks, a trust region anchored to previously verified safe conditions, and a two-phase strategy that transitions from conservative safe exploration to progressively relaxed rectification targets as the device degrades. We first evaluate SAL in simulation, where it safely expands the explored region while learning the evolving rectification surface. We then demonstrate SAL experimentally on an automated high-temperature probe-station platform using a Pt/Cr$_2$O$_3$:Mg/$β$-Ga$_2$O$_3$ device. In the reported campaign, phase 1 incurred only one unsafe measurement associated with spurious current-voltage sweeps, while phase 2 intentionally probed lower-rectification regimes. Finally, we use the curated SAL dataset for offline long-horizon forecasting of device response at a target voltage using a structured Gaussian-process model with a condition-dependent Kohlrausch--Williams--Watts mean and a residual covariance kernel. The model captures long-time, saturating degradation trends in an auxiliary validation dataset, illustrating how safety-aware autonomous experimentation enables both conservative characterization and subsequent degradation modeling. Although demonstrated for a rectifying Ga$_2$O$_3$ device, SAL is applicable to other systems where a measurable in situ safety observable can be defined.

Davi M Fébba, Kingsley Egbo, William A. Callahan et al.

Large language models (LLMs) are transforming the landscape of chemistry and materials science. Recent examples of LLM-accelerated experimental research include virtual assistants for parsing synthesis recipes from the literature, or using the extracted knowledge to guide synthesis and characterization. Despite these advancements, their application is constrained to labs with automated instruments and control software, leaving much of materials science reliant on manual processes. Here, we demonstrate the rapid deployment of a Python-based control module for a Keithley 2400 electrical source measure unit using ChatGPT-4. Through iterative refinement, we achieved effective instrument management with minimal human intervention. Additionally, a user-friendly graphical user interface (GUI) was created, effectively linking all instrument controls to interactive screen elements. Finally, we integrated this AI-crafted instrument control software with a high-performance stochastic optimization algorithm to facilitate rapid and automated extraction of electronic device parameters related to semiconductor charge transport mechanisms from current-voltage (IV) measurement data. This integration resulted in a comprehensive open-source toolkit for semiconductor device characterization and analysis using IV curve measurements. We demonstrate the application of these tools by acquiring, analyzing, and parameterizing IV data from a Pt/Cr$_2$O$_3$:Mg/$β$-Ga$_2$O$_3$ heterojunction diode, a novel stack for high-power and high-temperature electronic devices. This approach underscores the powerful synergy between LLMs and the development of instruments for scientific inquiry, showcasing a path for further acceleration in materials science.

Steven R. Spurgeon, Milad Abolhasani, Frederick Baddour et al.

Autonomous science is transforming how we discover materials and chemical systems for advanced energy technologies. However, many initially promising systems never reach deployment. This "valley of death" stems from optimization that prioritizes laboratory metrics over industrial viability. We propose a new strategy: "born-qualified" autonomous development, which embeds manufacturability, cost, and durability constraints from the outset. This approach is enabled by four pillars, including the development of multi-objective metrics, causal models, a modular infrastructure, and embedding manufacturing in the discovery loop. Realizing this vision will require sustained, community-wide commitment, but the potential return on that investment is commensurate with the scale of the challenge.

Davi M. Febba, Kevin R. Talley, Kendal Johnson et al.

Autonomous experimentation has emerged as an efficient approach to accelerate the pace of materials discovery. Although instruments for autonomous synthesis have become popular in molecular and polymer science, solution processing of hybrid materials and nanoparticles, examples of autonomous tools for physical vapor deposition are scarce yet important for the semiconductor industry. Here, we report the design and implementation of an autonomous workflow for sputter deposition of thin films with controlled composition, leveraging a highly automated sputtering reactor custom-controlled by Python, optical emission spectroscopy (OES), and a Bayesian optimization algorithm. We modeled film composition, measured by x-ray fluorescence, as a linear function of emission lines monitored during the co-sputtering from elemental Zn and Ti targets in N$_2$ atmosphere. A Bayesian control algorithm, informed by OES, navigates the space of sputtering power to fabricate films with user-defined composition, by minimizing the absolute error between desired and measured emission signals. We validated our approach by autonomously fabricating Zn$_x$Ti$_{1-x}$N$_y$ films with deviations from the targeted cation composition within relative 3.5 %, even for 15 nm thin films, demonstrating that the proposed approach can reliably synthesize thin films with specific composition and minimal human interference. Moreover, the proposed method can be extended to more difficult synthesis experiments where plasma intensity depends non-linearly on pressure, or the elemental sticking coefficients strongly depend on the substrate temperature.