7.3ARJun 11
A Modern Large-Scale Memory Characterization LaboratoryAtaberk Olgun, Haocong Luo, Ismail Emir Yuksel et al.
Real memory chip characterization yields insights into fundamental operational characteristics of modern memory, enabling new mechanisms that improve memory performance, robustness, security, and energy efficiency. We describe our large-scale DRAM characterization laboratory for understanding DRAM. A key building block of this laboratory is DRAM Bender, a versatile and easy-to-use modern DRAM characterization infrastructure. We have updated DRAM Bender to i) introduce support for new types of characterization experiments, ii) expand on its DRAM interface standard support, and iii) make it easier to use at large scale. This paper introduces these updates for the first time. We hope our infrastructure enables the community to discover new problems and solve critical memory scaling issues, enabling the overcoming of the huge memory bottleneck that plagues modern computing systems.
6.0CRJun 5
ScaleDisturb: Exploiting Temporal Asymmetry to Amplify Read Disturbance in Modern DRAM ChipsJikun Wang, Haocong Luo, Ataberk Olgun et al.
DRAM suffers from read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or continuously keeping open a DRAM row (aggressor row) induces bitflips in other physically nearby unaccessed rows (victim rows). The disturbance mechanism is practically exploitable from the software stack and worsens across generations with continued density scaling. DRAM read disturbance is highly sensitive to memory access patterns, yet prior work explores read disturbance under only a limited set of access patterns. We present ScaleDisturb, a new DRAM access pattern that can amplify DRAM read disturbance by asymmetrically extending the open time of two aggressor rows. Our rigorous experimental characterization of 196 DDR4 and 3 HBM2 DRAM chips shows that ScaleDisturb (1) leads to bitflips at significantly fewer row activations, compared to state-of-the-art memory access patterns, (2) makes read disturbance attacks easier across all tested DRAM chips, (3) increases DRAM vulnerability to read disturbance as DRAM manufacturing technology scales down to smaller node sizes. We showcase a proof-of-concept attack on a real system where a user-level program leveraging ScaleDisturb induces more bitflips than state-of-the-art RowHammer and RowPress memory access patterns. We describe and evaluate four solutions for mitigating read disturbance bitflips in the presence of ScaleDisturb and call for more research on the topic.
ColumnKeeper: Efficient Solutions to the ColumnDisturb Vulnerability in DRAM-based SystemsAndreas Kosmas Kakolyris, F. Nisa Bostanci, Ataberk Olgun et al.
Modern DRAM chips are vulnerable to read disturbance phenomena such as RowHammer and RowPress, which induce bitflips after accessing nearby rows a certain number of times (the read disturbance threshold). ColumnDisturb is a new, fundamentally different DRAM read disturbance phenomenon. Specifically, ColumnDisturb (i) disturbs DRAM columns instead of rows, and (ii) increases the number of affected DRAM cells from those in only a few neighboring rows to all cells across three consecutive DRAM subarrays. We propose ColumnKeeper, the first set of ColumnDisturb mitigations, in two variants: ColumnKeeper-D (CK-D), a deterministic mechanism, and ColumnKeeper-P (CK-P), a probabilistic one. CK-D exploits DRAM's open-bitline architecture to provide deterministic security guarantees at low performance and energy overheads: it uses two counters per subarray to track activations affecting the odd and even columns, and refreshes one row in a subarray when either counter reaches a predetermined threshold. CK-P instead refreshes one row in three consecutive subarrays upon a row activation in the middle subarray, with a predetermined probability, providing configurable security guarantees at low area overhead. Both mechanisms prevent ColumnDisturb bitflips at low performance, energy, and area overheads. At the current experimentally-demonstrated ColumnDisturb threshold (1M), CK-D and CK-P incur very low average single-core performance overheads of 0.15% and 0.36%, respectively. For near-future thresholds (128K), these rise to a still low average of 1.70% and 2.73%. Mitigating ColumnDisturb at low thresholds (e.g., 16K) remains possible by adopting smaller subarray sizes or enabling subarray-level parallelism. CK-D and CK-P require low area overheads of 0.1 mm^2 and 0.03 mm^2, respectively. ColumnKeeper is freely available at https://github.com/CMU-SAFARI/ColumnKeeper .
In-DRAM Signature Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Off-The-Shelf DRAM ChipsUmut Baser, Ismail Emir Yuksel, F. Nisa Bostanci et al.
We experimentally demonstrate that it is possible to generate unique, repeatable, and device-specific signatures suitable for use as Physical Unclonable Function (PUF) responses in commercial off-the-shelf (COTS) DRAM chips by leveraging simultaneous multiple-row activation (SiMRA). Based on a rigorous experimental characterization of 112 modern DDR4 DRAM chips (from 10 modules), we introduce SiMRA-PUF, the first DRAM-based PUF that uses SiMRA-generated signatures as PUF responses. We analyze SiMRA-PUF in terms of reliability, uniqueness, and evaluation latency for varying numbers of simultaneously activated DRAM rows (i.e., 2, 4, 8, 16, and 32), DRAM chip density & die revision, and evaluate how temperature affects the similarity of SiMRA-generated responses. Among our 8 key experimental observations, we highlight two major results. First, SiMRA-PUF provides average intra-Jaccard indices of 89.02%, 89.81%, 93.03%, 94.06%, and 94.86%, and average inter-Jaccard indices of 3.98%, 2.37%, 3.44%, 2.92%, and 3.24% for 2-, 4-, 8-, 16-, and 32-row activations, respectively, showing that SiMRA-generated signatures are both repeatable within a device and unique across devices. Second, 2-row activation-based SiMRA-PUF provides 5.75% lower evaluation latency than the state-of-the-art DRAM-based PUF. We open-source our infrastructure and datasets at https://github.com/CMU-SAFARI/SiMRA-PUF.
4.6ARJun 22
Clutch: High Performance Vector-Scalar Comparison using DRAM via Chunked Temporal CodingDaichi Tokuda, Tatsuya Kubo, Ismail Emir Yuksel et al.
Vector-scalar comparison is a fundamental computation primitive that compares each element in a vector against a single scalar value. It is widely used in various data-intensive workloads from databases to machine learning. Due to its low computational intensity, its execution tends to be memory-bound, limiting the utilization of compute resources. Processing-using-DRAM (PuD) is an emerging computing paradigm that performs massively parallel bitwise operations directly inside DRAM arrays, alleviating off-chip data movement. Existing PuD-based approaches require many DRAM commands because the comparison's algorithmic complexity grows with operand bit-width in the bit-serial execution model. This command overhead becomes the dominant bottleneck, limiting application-level speedup. We propose Clutch, a data representation and comparison algorithm that accelerates vector-scalar comparisons in PuD systems with high efficiency and scalability. Clutch first uses temporal coding, encoding each vector value as a sequence of leading ones, which enables lookup-based comparison against a scalar by accessing the corresponding DRAM row. To avoid the prohibitive memory footprint of lookup tables at high precision, Clutch partitions operands into multiple multi-bit chunks, compares chunks independently using compact lookup tables, and merges the per-chunk results with a PuD-efficient procedure. By adjusting the number of chunks, Clutch provides a flexible tradeoff between throughput and memory usage. Across predicate evaluation and decision tree inference, Clutch improves end-to-end application throughput and energy efficiency by an average of 12x and 69x over highly optimized CPU and GPU execution, and by 2.9x and 3.0x over the state-of-the-art bit-serial PuD implementation. We also present the first mapping of decision tree inference to PuD execution, extending PuD to a new application domain.
6.0ARJun 21
DejaVu: Why You Should Write to Your DRAM Rows Twice, CarefullyHaocong Luo, İsmail Emir Yüksel, Ataberk Olgun et al.
We provide the first experimental demonstration of DejaVu, a phenomenon where the data previously written to DRAM cells affects DRAM's vulnerability to read disturbance. Our experimental characterization using 112 COTS DDR4 DRAM chips from all three major manufacturers shows that, compared to the baseline where we initialize the victim row by writing to it only once, 1) overwriting it with the opposite data reduces ACmin, the minimum aggressor row activation count to induce a bitflip, and 2) writing the same data twice increases ACmin. We provide two hypotheses to explain DejaVu. First, we hypothesize that overwriting the victim row with opposite data values causes under-restoration of charge in DRAM cells. Second, we hypothesize that overwriting the victim row changes charge trap states in the active region, affecting read-disturbance-induced cell leakage current. We conduct controlled characterization to provide insight into these hypotheses. We further characterize the reliability of Processing-Using-DRAM (PUD) operations with DRAM rows initialized with DejaVu patterns. Our characterization of 32-row MAJ-3 operation shows that overwriting the DRAM rows used in the operation reduces the number of bitlines that fail to reliably perform MAJ-3 by 32.7% on average compared to the baseline where rows are written only once. Based on our observations, we describe two major implications of DejaVu. We show how DRAM testing and characterization methodologies should account for DejaVu to accurately characterize read disturbance vulnerability under fixed data patterns and rigorously study data-pattern effects without unintended interference from DejaVu. We also evaluate the performance overhead of read disturbance mitigation techniques when thresholds need to be lowered to be secure against DejaVu, showing a 6.3% overhead when reducing the threshold by 20%.
6.9CRJun 18
Memory-Centric Computing: Security Benefits and Challenges of Processing-in-DRAMIsmail Emir Yuksel, F. Nisa Bostanci, Ataberk Olgun et al.
Today's computing systems are processor-centric: they require frequent data movement between processing elements (e.g., CPU) and main memory (DRAM), leading to significant inefficiencies in performance and energy consumption. Memory-centric computing instead moves computation to the data, enabling computation capability in and near all places where data is generated and stored, and greatly reducing the performance and energy overheads of data access and data movement. This shift from a processor-centric to a memory-centric paradigm has important and underexplored consequences for system security. Turning memory from a dumb, inactive store into an active computing substrate introduces benefits as well as challenges for system security: it can provide new in-memory security primitives and also reduce data exposure, but it can also expose new attack surfaces. This work discusses the security benefits and challenges of memory-centric computing, specifically Processing-in-DRAM (PiD), a paradigm where the operational characteristics of a DRAM chip are exploited and enhanced to perform computation on data stored in DRAM. Specifically, we describe 1) new state-of-the-art DRAM-based true random number generators that provide up to 16.05 Gb/s throughput and physical unclonable functions with 5.75% lower evaluation latency than the prior state-of-the-art, both on real DRAM chips and 2) two key security challenges of PiD: amplified DRAM read disturbance (e.g., 158x reduction in the minimum number of DRAM accesses required to induce the first bitflip) and high throughput memory timing channels (e.g., a communication throughput of 14.8Mb/s). We believe it is time to design, use, and program DRAM, and in general memory, not as an inactive storage substrate, but as a combined computation, storage, and security substrate, where computational capability, storage density, and security are all key goals.
5.9ARJun 17
PuDGhost: Experimental Analysis of Computation Result Corruption in Processing-using-DRAM Operations on Real DRAM Chips and Implications for Future SystemsDaichi Tokuda, İsmail Emir Yüksel, Tatsuya Kubo et al.
Processing-using-DRAM (PuD) is a promising computation paradigm that alleviates frequent data movement between main memory and processing units by using each DRAM column as a computation engine via simultaneous multiple-row activation (SiMRA). Unfortunately, DRAM density scaling may hinder PuD's benefits: denser cell arrays bring rows and columns closer, making regular DRAM operations susceptible to noise and interference from neighboring cells. Yet no prior work investigates whether interference from rows or columns not intended to participate in computation can compromise PuD robustness. In this work, we reveal PuDGhost, an interference phenomenon where a PuD operation in a given column produces erroneous results due to interference from 1) data in non-activated DRAM rows and 2) data in other columns that compute concurrently under the same SiMRA operation. PuDGhost violates the ideal picture that each column's computation depends solely on its own operand data, threatening future PuD systems. We present the first extensive characterization of PuDGhost using 96 real DDR4 DRAM chips from 12 modules, quantifying these two interference sources under various conditions. Among our 15 new empirical observations, we highlight two major results: 1) data in adjacent non-activated rows affects SiMRA outputs by up to 10% for random inputs, and 2) data in concurrently computing columns affects SiMRA outputs by up to 48% for random inputs. Guided by these findings, we propose countermeasures across multiple layers of the PuD computing stack. Specifically, we evaluate on real DDR4 DRAM chips: 1) robust column screening that reduces the risk of using unreliable columns in the presence of PuDGhost, and 2) a compute row layout that mitigates PuDGhost via dedicated rows between compute rows. Our solutions greatly improve PuD computation accuracy and provide a foundation for robust future PuD systems.
7.3ARMar 12
DiscoRD: An Experimental Methodology for Quickly Discovering the Reliable Read Disturbance Threshold of Real DRAM ChipsAtaberk Olgun, F. Nisa Bostanci, Ismail Emir Yuksel et al.
State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read disturbance bitflip) to securely and performance- and energy-efficiently prevent read disturbance bitflips. However, accurately and exhaustively characterizing the RDT of every DRAM row in a chip is time intensive. Rapidly determining RDT is important for enabling secure, performance- and energy-efficient systems. Our goal is to develop and evaluate a reliable and rapid read disturbance testing methodology. To that end, we develop DiscoRD building on the key results of an extensive experimental characterization study using 212 real DDR4 chips whereby we measure the RDT of hundreds of thousands of DRAM rows millions of times. We develop an empirical model for read disturbance bitflips and evaluate the probability of read-disturbance-induced uncorrectable errors when a read disturbance mechanism is configured using a single $RDT_{min}$ measurement. Using this model we demonstrate that 1) relying on a lightweight error-correcting code (ECC) alone yields relatively high uncorrectable error probability and 2) combining ECC, infrequent memory scrubbing, and configurable read disturbance mitigation mechanisms can greatly reduce the error probability. Building on our observations and analyses, we discuss the RDT of each individual row can be identified more precisely. Our results show that error tolerance, memory scrubbing, online profiling, and run-time configurable read disturbance mitigation techniques are important to enable secure and energy-efficient spatial-variation aware read disturbance mitigations. We hope that DiscoRD drives research that enables us to quantitatively navigate the performance/cost - reliability tradeoff space for read disturbance mitigation techniques.
5.0LGMay 4, 2020
An Experimental Study of Reduced-Voltage Operation in Modern FPGAs for Neural Network AccelerationBehzad Salami, Erhan Baturay Onural, Ismail Emir Yuksel et al.
We empirically evaluate an undervolting technique, i.e., underscaling the circuit supply voltage below the nominal level, to improve the power-efficiency of Convolutional Neural Network (CNN) accelerators mapped to Field Programmable Gate Arrays (FPGAs). Undervolting below a safe voltage level can lead to timing faults due to excessive circuit latency increase. We evaluate the reliability-power trade-off for such accelerators. Specifically, we experimentally study the reduced-voltage operation of multiple components of real FPGAs, characterize the corresponding reliability behavior of CNN accelerators, propose techniques to minimize the drawbacks of reduced-voltage operation, and combine undervolting with architectural CNN optimization techniques, i.e., quantization and pruning. We investigate the effect of environmental temperature on the reliability-power trade-off of such accelerators. We perform experiments on three identical samples of modern Xilinx ZCU102 FPGA platforms with five state-of-the-art image classification CNN benchmarks. This approach allows us to study the effects of our undervolting technique for both software and hardware variability. We achieve more than 3X power-efficiency (GOPs/W) gain via undervolting. 2.6X of this gain is the result of eliminating the voltage guardband region, i.e., the safe voltage region below the nominal level that is set by FPGA vendor to ensure correct functionality in worst-case environmental and circuit conditions. 43% of the power-efficiency gain is due to further undervolting below the guardband, which comes at the cost of accuracy loss in the CNN accelerator. We evaluate an effective frequency underscaling technique that prevents this accuracy loss, and find that it reduces the power-efficiency gain from 43% to 25%.