Mustafa Ali

Tanvi Sharma, Mustafa Ali, Indranil Chakraborty et al.

Matrix multiplication is the dominant computation during Machine Learning (ML) inference. To efficiently perform such multiplication operations, Compute-in-memory (CiM) paradigms have emerged as a highly energy efficient solution. However, integrating compute in memory poses key questions, such as 1) What type of CiM to use: Given a multitude of CiM design characteristics, determining their suitability from architecture perspective is needed. 2) When to use CiM: ML inference includes workloads with a variety of memory and compute requirements, making it difficult to identify when CiM is more beneficial than standard processing cores. 3) Where to integrate CiM: Each memory level has different bandwidth and capacity, creating different data reuse opportunities for CiM integration. To answer such questions regarding on-chip CiM integration for accelerating ML workloads, we use an analytical architecture-evaluation methodology with tailored mapping algorithm. The mapping algorithm aims to achieve highest weight reuse and reduced data movements for a given CiM prototype and workload. Our analysis considers the integration of CiM prototypes into the cache levels of a tensor-core-like architecture, and shows that CiM integrated memory improves energy efficiency by up to 3.4x and throughput by up to 15.6x compared to established baseline with INT-8 precision. We believe the proposed work provides insights into what type of CiM to use, and when and where to optimally integrate it in the cache hierarchy for efficient matrix multiplication.

Mustafa Ali, Akhilesh Jaiswal, Sangamesh Kodge et al.

`In-memory computing' is being widely explored as a novel computing paradigm to mitigate the well known memory bottleneck. This emerging paradigm aims at embedding some aspects of computations inside the memory array, thereby avoiding frequent and expensive movement of data between the compute unit and the storage memory. In-memory computing with respect to Silicon memories has been widely explored on various memory bit-cells. Embedding computation inside the 6 transistor (6T) SRAM array is of special interest since it is the most widely used on-chip memory. In this paper, we present a novel in-memory multiplication followed by accumulation operation capable of performing parallel dot products within 6T SRAM without any changes to the standard bitcell. We, further, study the effect of circuit non-idealities and process variations on the accuracy of the LeNet-5 and VGG neural network architectures against the MNIST and CIFAR-10 datasets, respectively. The proposed in-memory dot-product mechanism achieves 88.8% and 99% accuracy for the CIFAR-10 and MNIST, respectively. Compared to the standard von Neumann system, the proposed system is 6.24x better in energy consumption and 9.42x better in delay.