Kezhou Yang

h-index6
2papers
141citations

2 Papers

7.0NEJun 2
Signed Spiking Neuron Enabled by an Orthogonal-Easy-Axis Magnetic Tunnel Junction

Huannan Zheng, Jingli Liu, Kezhou Yang

Signed spiking neurons carry richer information than standard spiking neurons. This work proposes a compact magnetic tunnel junction (MTJ)-based neuron for signed leaky integrate-and-fire (LIF) operation. With orthogonal easy axes in the free and pinned layers, the device enables bipolar spike generation and maps magnetic-moment dynamics to signed LIF membrane-potential evolution. Landau--Lifshitz--Gilbert simulations show that proper free-layer dimensions allow the device response to follow a signed LIF equation. A representative design of 10 nm x 45 nm x 50 nm corresponds to an aspect ratio of about 2:9:10. Network evaluations using the fitted device-neuron model achieve 91.06% on CIFAR-10 and 77.40% on CIFAR10-DVS, retaining most of the accuracy of ideal signed LIF neurons.

5.9ETNov 16, 2019
Exploiting Oxide Based Resistive RAM Variability for Bayesian Neural Network Hardware Design

Akul Malhotra, Sen Lu, Kezhou Yang et al.

Uncertainty plays a key role in real-time machine learning. As a significant shift from standard deep networks, which does not consider any uncertainty formulation during its training or inference, Bayesian deep networks are being currently investigated where the network is envisaged as an ensemble of plausible models learnt by the Bayes' formulation in response to uncertainties in sensory data. Bayesian deep networks consider each synaptic weight as a sample drawn from a probability distribution with learnt mean and variance. This paper elaborates on a hardware design that exploits cycle-to-cycle variability of oxide based Resistive Random Access Memories (RRAMs) as a means to realize such a probabilistic sampling function, instead of viewing it as a disadvantage.