Qiang Xu

h-index36
2papers
5,375citations

2 Papers

1.2AROct 29, 2025
PDA-LSTM: Knowledge-driven page data arrangement based on LSTM for LCM supression in QLC 3D NAND flash memories

Qianhui Li, Weiya Wang, Qianqi Zhao et al.

Quarter level cell (QLC) 3D NAND flash memory is emerging as the predominant storage solution in the era of artificial intelligence. QLC 3D NAND flash stores 4 bit per cell to expand the storage density, resulting in narrower read margins. Constrained to read margins, QLC always suffers from lateral charge migration (LCM), which caused by non-uniform charge density across adjacent memory cells. To suppress charge density gap between cells, there are some algorithm in form of intra-page data mapping such as WBVM, DVDS. However, we observe inter-page data arrangements also approach the suppression. Thus, we proposed an intelligent model PDA-LSTM to arrange intra-page data for LCM suppression, which is a physics-knowledge-driven neural network model. PDA-LSTM applies a long-short term memory (LSTM) neural network to compute a data arrangement probability matrix from input page data pattern. The arrangement is to minimize the global impacts derived from the LCM among wordlines. Since each page data can be arranged only once, we design a transformation from output matrix of LSTM network to non-repetitive sequence generation probability matrix to assist training process. The arranged data pattern can decrease the bit error rate (BER) during data retention. In addition, PDA-LSTM do not need extra flag bits to record data transport of 3D NAND flash compared with WBVM, DVDS. The experiment results show that the PDA-LSTM reduces the average BER by 80.4% compared with strategy without data arrangement, and by 18.4%, 15.2% compared respectively with WBVM and DVDS with code-length 64.

15.7LGSep 5, 2025
Revolution or Hype? Seeking the Limits of Large Models in Hardware Design

Qiang Xu, Leon Stok, Rolf Drechsler et al.

Recent breakthroughs in Large Language Models (LLMs) and Large Circuit Models (LCMs) have sparked excitement across the electronic design automation (EDA) community, promising a revolution in circuit design and optimization. Yet, this excitement is met with significant skepticism: Are these AI models a genuine revolution in circuit design, or a temporary wave of inflated expectations? This paper serves as a foundational text for the corresponding ICCAD 2025 panel, bringing together perspectives from leading experts in academia and industry. It critically examines the practical capabilities, fundamental limitations, and future prospects of large AI models in hardware design. The paper synthesizes the core arguments surrounding reliability, scalability, and interpretability, framing the debate on whether these models can meaningfully outperform or complement traditional EDA methods. The result is an authoritative overview offering fresh insights into one of today's most contentious and impactful technology trends.