Jae-Won Jang

2papers

2 Papers

CRMay 7, 2017
A Novel Interconnect Camouflaging Technique using Transistor Threshold Voltage

Jae-Won Jang, Swaroop Ghosh

Semiconductor supply chain is increasingly getting exposed to variety of security attacks such as Trojan insertion, cloning, counterfeiting, reverse engineering (RE) and piracy of Intellectual Property (IP) due to involvement of untrusted parties. Camouflaging of gates has been proposed to hide the functionality of gates. However, gate camouflaging is associated with significant area, power and delay overhead. In this paper, we propose camouflaging of interconnects using multiplexers (muxes) to protect the IP. A transistor threshold voltage-defined pass transistor mux is proposed to prevent its reverse engineering since transistor threshold voltage is opaque to the adversary. The proposed mux with more than one input, hides the original connectivity of the net. The camouflaged design operates at nominal voltage and obeys conventional reliability limits. A small fraction of nets can be camouflaged to increase the RE effort extremely high while keeping the overhead low. We propose controllability, observability and random net selection strategy for camouflaging. Simulation results indicate 15-33% area, 25-44% delay and 14-29% power overhead when 5-15% nets are camouflaged using the proposed 2:1 mux. By increasing the mux size to 4:1, 8:1, and 16:1, the RE effort can be further improved with small area, delay, and power penalty.

CRMay 13, 2015
Schmitt-Trigger-based Recycling Sensor and Robust and High-Quality PUFs for Counterfeit IC Detection

Cheng-Wei Lin, Jae-Won Jang, Swaroop Ghosh

We propose Schmitt-Trigger (ST) based recycling sensor that are tailored to amplify the aging mechanisms and detect fine grained recycling (minutes to seconds). We exploit the susceptibility of ST to process variations to realize high-quality arbiter PUF. Conventional SRAM PUF suffer from environmental fluctuation-induced bit flipping. We propose 8T SRAM PUF with a back-to-back PMOS latch to improve robustness by 4X. We also propose a low-power 7T SRAM with embedded Magnetic Tunnel Junction (MTJ) devices to enhance the robustness (2.3X to 20X).