4.3ARAug 17, 2021
Edge AI without Compromise: Efficient, Versatile and Accurate Neurocomputing in Resistive Random-Access MemoryWeier Wan, Rajkumar Kubendran, Clemens Schaefer et al.
Realizing today's cloud-level artificial intelligence functionalities directly on devices distributed at the edge of the internet calls for edge hardware capable of processing multiple modalities of sensory data (e.g. video, audio) at unprecedented energy-efficiency. AI hardware architectures today cannot meet the demand due to a fundamental "memory wall": data movement between separate compute and memory units consumes large energy and incurs long latency. Resistive random-access memory (RRAM) based compute-in-memory (CIM) architectures promise to bring orders of magnitude energy-efficiency improvement by performing computation directly within memory. However, conventional approaches to CIM hardware design limit its functional flexibility necessary for processing diverse AI workloads, and must overcome hardware imperfections that degrade inference accuracy. Such trade-offs between efficiency, versatility and accuracy cannot be addressed by isolated improvements on any single level of the design. By co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present NeuRRAM - the first multimodal edge AI chip using RRAM CIM to simultaneously deliver a high degree of versatility for diverse model architectures, record energy-efficiency $5\times$ - $8\times$ better than prior art across various computational bit-precisions, and inference accuracy comparable to software models with 4-bit weights on all measured standard AI benchmarks including accuracy of 99.0% on MNIST and 85.7% on CIFAR-10 image classification, 84.7% accuracy on Google speech command recognition, and a 70% reduction in image reconstruction error on a Bayesian image recovery task. This work paves a way towards building highly efficient and reconfigurable edge AI hardware platforms for the more demanding and heterogeneous AI applications of the future.
8.4LGFeb 15, 2021
Neural Network Compression for Noisy Storage DevicesBerivan Isik, Kristy Choi, Xin Zheng et al.
Compression and efficient storage of neural network (NN) parameters is critical for applications that run on resource-constrained devices. Despite the significant progress in NN model compression, there has been considerably less investigation in the actual \textit{physical} storage of NN parameters. Conventionally, model compression and physical storage are decoupled, as digital storage media with error-correcting codes (ECCs) provide robust error-free storage. However, this decoupled approach is inefficient as it ignores the overparameterization present in most NNs and forces the memory device to allocate the same amount of resources to every bit of information regardless of its importance. In this work, we investigate analog memory devices as an alternative to digital media -- one that naturally provides a way to add more protection for significant bits unlike its counterpart, but is noisy and may compromise the stored model's performance if used naively. We develop a variety of robust coding strategies for NN weight storage on analog devices, and propose an approach to jointly optimize model compression and memory resource allocation. We then demonstrate the efficacy of our approach on models trained on MNIST, CIFAR-10 and ImageNet datasets for existing compression techniques. Compared to conventional error-free digital storage, our method reduces the memory footprint by up to one order of magnitude, without significantly compromising the stored model's accuracy.
4.3ETNov 23, 2018
Hyperdimensional Computing NanosystemAbbas Rahimi, Tony F. Wu, Haitong Li et al.
One viable solution for continuous reduction in energy-per-operation is to rethink functionality to cope with uncertainty by adopting computational approaches that are inherently robust to uncertainty. It requires a novel look at data representations, associated operations, and circuits, and at materials and substrates that enable them. 3D integrated nanotechnologies combined with novel brain-inspired computational paradigms that support fast learning and fault tolerance could lead the way. Recognizing the very size of the brain's circuits, hyperdimensional (HD) computing can model neural activity patterns with points in a HD space, that is, with hypervectors as large randomly generated patterns. At its very core, HD computing is about manipulating and comparing these patterns inside memory. Emerging nanotechnologies such as carbon nanotube field effect transistors (CNFETs) and resistive RAM (RRAM), and their monolithic 3D integration offer opportunities for hardware implementations of HD computing through tight integration of logic and memory, energy-efficient computation, and unique device characteristics. We experimentally demonstrate and characterize an end-to-end HD computing nanosystem built using monolithic 3D integration of CNFETs and RRAM. With our nanosystem, we experimentally demonstrate classification of 21 languages with measured accuracy of up to 98% on >20,000 sentences (6.4 million characters), training using one text sample (~100,000 characters) per language, and resilient operation (98% accuracy) despite 78% hardware errors in HD representation (outputs stuck at 0 or 1). By exploiting the unique properties of the underlying nanotechnologies, we show that HD computing, when implemented with monolithic 3D integration, can be up to 420X more energy-efficient while using 25X less area compared to traditional silicon CMOS implementations.
15.3NEJun 19, 2014
Brain-like associative learning using a nanoscale non-volatile phase change synaptic device arraySukru Burc Eryilmaz, Duygu Kuzum, Rakesh Jeyasingh et al.
Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance.