Dongheng Qian

Dongheng Qian, Jing Wang

Measurement-induced entanglement (MIE) captures how local measurements generate long-range quantum correlations and drive dynamical phase transitions in many-body systems. Yet estimating MIE experimentally remains challenging: direct evaluation requires extensive post-selection over measurement outcomes, raising the question of whether MIE is accessible with only polynomial resources. We address this challenge by reframing MIE detection as a data-driven learning problem that assumes no prior knowledge of state preparation. Using measurement records alone, we train a neural network in a self-supervised manner to predict the uncertainty metric for MIE--the gap between upper and lower bounds of the average post-measurement bipartite entanglement. Applied to random circuits with one-dimensional all-to-all connectivity and two-dimensional nearest-neighbor coupling, our method reveals a learnability transition with increasing circuit depth: below a threshold, the uncertainty is small and decreases with polynomial measurement data and model parameters, while above it the uncertainty remains large despite increasing resources. We further verify this transition experimentally on current noisy quantum devices, demonstrating its robustness to realistic noise. These results highlight the power of data-driven approaches for learning MIE and delineate the practical limits of its classical learnability.

Haosheng Xu, Dongheng Qian, Zhixuan Liu et al.

Topological insulators (TIs) and topological crystalline insulators (TCIs) are materials with unconventional electronic properties, making their discovery highly valuable for practical applications. However, such materials, particularly those with a full band gap, remain scarce. Given the limitations of traditional approaches that scan known materials for candidates, we focus on the generation of new topological materials through a generative model. Specifically, we apply reinforcement fine-tuning (ReFT) to a pre-trained generative model, thereby aligning the model's objectives with our material design goals. We demonstrate that ReFT is effective in enhancing the model's ability to generate TIs and TCIs, with minimal compromise on the stability of the generated materials. Using the fine-tuned model, we successfully identify a large number of new topological materials, with Ge$_2$Bi$_2$O$_6$ serving as a representative example--a TI with a full band gap of 0.26 eV, ranking among the largest known in this category.