Donato Francesco Falcone

Nikhil Garg, Ismael Balafrej, Joao Henrique Quintino Palhares et al.

The deployment of AI on edge computing devices faces significant challenges related to energy consumption and functionality. These devices could greatly benefit from brain-inspired learning mechanisms, allowing for real-time adaptation while using low-power. In-memory computing with nanoscale resistive memories may play a crucial role in enabling the execution of AI workloads on these edge devices. In this study, we introduce voltage-dependent synaptic plasticity (VDSP) as an efficient approach for unsupervised and local learning in memristive synapses based on Hebbian principles. This method enables online learning without requiring complex pulse-shaping circuits typically necessary for spike-timing-dependent plasticity (STDP). We show how VDSP can be advantageously adapted to three types of memristive devices (TiO$_2$, HfO$_2$-based metal-oxide filamentary synapses, and HfZrO$_4$-based ferroelectric tunnel junctions (FTJ)) with disctinctive switching characteristics. System-level simulations of spiking neural networks incorporating these devices were conducted to validate unsupervised learning on MNIST-based pattern recognition tasks, achieving state-of-the-art performance. The results demonstrated over 83% accuracy across all devices using 200 neurons. Additionally, we assessed the impact of device variability, such as switching thresholds and ratios between high and low resistance state levels, and proposed mitigation strategies to enhance robustness.

Nikhil Garg, Paul Uriarte Vicandi, Yanming Zhang et al.

The increasing deployment of wearable sensors and implantable devices is shifting AI processing demands to the extreme edge, necessitating ultra-low power for continuous operation. Inspired by the brain, emerging memristive devices promise to accelerate neural network training by eliminating costly data transfers between compute and memory. Though, balancing performance and energy efficiency remains a challenge. We investigate ferroelectric synaptic devices based on HfO2/ZrO2 superlattices and feed their experimentally measured weight updates into hardware-aware neural network simulations. Across pulse widths from 20 ns to 0.2 ms, shorter pulses lower per-update energy but require more training epochs while still reducing total energy without sacrificing accuracy. Classification accuracy using plain stochastic gradient descent (SGD) is diminished compared to mixed-precision SGD. We analyze the causes and propose a ``symmetry point shifting'' technique, addressing asymmetric updates and restoring accuracy. These results highlight a trade-off among accuracy, convergence speed, and energy use, showing that short-pulse programming with tailored training significantly enhances on-chip learning efficiency.