Mark Friesen

h-index19
2papers

2 Papers

77.3QUANT-PHMar 17Code
FAlCon: A unified framework for algorithmic control of quantum dot devices

Tyler J. Kovach, Daniel Schug, Zach D. Merino et al.

As spin-based quantum systems scale, their setup and control complexity increase sharply. In semiconductor quantum dot (QD) experiments, device-to-device variability, heterogeneous control-electronics stacks, and differing operational modalities make it difficult to reuse characterization, calibration, and control logic across laboratories. We present FAlCon, an open-source software ecosystem for portable, automated characterization and tuning measurement workflows. FAlCon provides (i) a lightweight domain-specific language for expressing state-based tuning logic in a hardware-agnostic form; (ii) specialized transmittable libraries of physics-informed QD data structures (``tuning vernacula''); and (iii) extensible libraries of shared measurement protocols enabling an interoperable lab-agnostic measurement stack. By separating algorithm intent from instrument realization, while preserving traceability and supporting typed scripting, FAlCon enables researchers and engineers to exchange, adapt, and deploy characterization and autotuning routines across heterogeneous QD setups. The framework supports all users, ranging from end users running prebuilt algorithms with custom initial conditions to developers extending instrumentation support and contributing new tuning strategies. Although the present release targets QD experiments, other qubit modalities and scientific experiments could reuse FAlCon's modular abstractions by providing new tuning data types and instrument control templates.

MES-HALLDec 10, 2024
Bootstrapping, Autonomous Testing, and Initialization System for Si/SiGe Multi-quantum Dot Devices

Tyler J. Kovach, Daniel Schug, M. A. Wolfe et al.

Semiconductor quantum dot (QD) devices have become central to advancements in spin-based quantum computing. However, the increasing complexity of modern QD devices makes calibration and control -- particularly at elevated temperatures -- a bottleneck to progress, highlighting the need for robust and scalable autonomous solutions. A major hurdle arises from trapped charges within the oxide layers, which induce random offset voltage shifts on gate electrodes, with a standard deviation of approximately 83~\si{\milli\volt} of variation within state-of-the-art present-day devices. Efficient characterization and tuning of large arrays of QD qubits depend on choices of automated protocols. Here, we introduce a physically intuitive framework for a bootstrapping, autonomous testing, and initialization system (BATIS) designed to streamline QD device evaluation and calibration. BATIS navigates high-dimensional gate voltage spaces, automating essential steps such as leakage testing, formation of all current channels, and gate characterization in the presence of trapped charges. For forming the current channels, BATIS follows a non-standard approach that requires a single set of measurements regardless of the number of channels. Demonstrated at $1.3$~\si{\kelvin} on a quad-QD Si/Si$_x$Ge$_{1-x}$ device, BATIS eliminates the need for deep cryogenic environments during initial device diagnostics, significantly enhancing scalability and reducing setup times. By requiring only minimal prior knowledge of the device architecture, BATIS represents a platform-agnostic solution, adaptable to various QD systems, which bridges a critical gap in QD autotuning.