An Energy-Efficient Spiking Neural Network for Finger Velocity Decoding for Implantable Brain-Machine InterfaceJiawei Liao, Lars Widmer, Xiaying Wang et al.
Brain-machine interfaces (BMIs) are promising for motor rehabilitation and mobility augmentation. High-accuracy and low-power algorithms are required to achieve implantable BMI systems. In this paper, we propose a novel spiking neural network (SNN) decoder for implantable BMI regression tasks. The SNN is trained with enhanced spatio-temporal backpropagation to fully leverage its ability in handling temporal problems. The proposed SNN decoder achieves the same level of correlation coefficient as the state-of-the-art ANN decoder in offline finger velocity decoding tasks, while it requires only 6.8% of the computation operations and 9.4% of the memory access.
3.3ARMay 6, 2024
DeltaKWS: A 65nm 36nJ/Decision Bio-inspired Temporal-Sparsity-Aware Digital Keyword Spotting IC with 0.6V Near-Threshold SRAMQinyu Chen, Kwantae Kim, Chang Gao et al.
This paper introduces DeltaKWS, to the best of our knowledge, the first $Δ$RNN-enabled fine-grained temporal sparsity-aware KWS IC for voice-controlled devices. The 65 nm prototype chip features a number of techniques to enhance performance, area, and power efficiencies, specifically: 1) a bio-inspired delta-gated recurrent neural network ($Δ$RNN) classifier leveraging temporal similarities between neighboring feature vectors extracted from input frames and network hidden states, eliminating unnecessary operations and memory accesses; 2) an IIR BPF-based FEx that leverages mixed-precision quantization, low-cost computing structure and channel selection; 3) a 24 kB 0.6 V near-$V_\text{TH}$ weight SRAM that achieves 6.6X lower read power than the foundry-provided SRAM. From chip measurement results, we show that the DeltaKWS achieves an 11/12-class GSCD accuracy of 90.5%/89.5% respectively and energy consumption of 36 nJ/decision in 65 nm CMOS process. At 87% temporal sparsity, computing latency and energy/inference are reduced by 2.4X/3.4X, respectively. The IIR BPF-based FEx, $Δ$RNN accelerator, and 24 kB near-$V_\text{TH}$ SRAM blocks occupy 0.084 mm$^{2}$, 0.319 mm$^{2}$, and 0.381 mm$^{2}$ respectively (0.78 mm$^{2}$ in total).