Johannes Steiner

Binh Duong Nguyen, Johannes Steiner, Peter Wellmann et al.

Detecting and analyzing various defect types in semiconductor materials is an important prerequisite for understanding the underlying mechanisms as well as tailoring the production processes. Analysis of microscopy images that reveal defects typically requires image analysis tasks such as segmentation and object detection. With the permanently increasing amount of data that is produced by experiments, handling these tasks manually becomes more and more impossible. In this work, we combine various image analysis and data mining techniques for creating a robust and accurate, automated image analysis pipeline. This allows for extracting the type and position of all defects in a microscopy image of a KOH-etched 4H-SiC wafer that was stitched together from approximately 40,000 individual images.

Johannes Steiner, Daniel Ruprecht, Robert Speck et al.

The paper presents first a linear stability analysis for the time-parallel Parareal method, using an IMEX Euler as coarse and a Runge-Kutta-3 method as fine propagator, confirming that dominant imaginary eigenvalues negatively affect Parareal's convergence. This suggests that when Parareal is applied to the nonlinear Navier-Stokes equations, problems for small viscosities could arise. Numerical results for a driven cavity benchmark are presented, confirming that Parareal's convergence can indeed deteriorate as viscosity decreases and the flow becomes increasingly dominated by convection. The effect is found to strongly depend on the spatial resolution.