Wei Xuan

h-index7
3papers
301citations

3 Papers

6.3ARApr 28
FusionCIM: Accelerating LLM Inference with Fusion-Driven Computing-in-Memory Architecture

Zihao Xuan, Jia Chen, Yewen Li et al.

In this paper, we propose FusionCIM, an operator-fusion-driven compute-in-memory (CIM) accelerator architecture for efficient and scalable LLM inference, with three key innovations: (1) a hybrid CIM pipeline architecture that maps QKT computation on inner-product-based CIM (IP-CIM) and PV aggregation on outer-product-based CIM (OP-CIM) for efficient matrix multiplications fusion; (2) a QO-stationary dataflow that eliminates repeated KV loading in CIM and K-matrix access in buffer under transpose fusion, significantly improving data reuse on chip; and (3) a pattern-aware online-softmax mechanism that exploits distribution regularities of attention scores to reduce exponential rescaling overhead for non-linear fusion. Experimental results on LLaMA-3 model show that FusionCIM achieves up to 3.86x energy saving, and 1.98x speedup compared with prior SOTA CIM-based designs with 29.4 TOPS/W energy efficiency at the system level.

4.3ARAug 11
You Only Charge Once 2.0 : A End-to-End Analog Computing-in-Memory Architecture with Reconfigurable Switched Capacitors

Zihao Xuan, Yewen Li, Jia Chen et al.

Analog Computing-in-Memory (ACiM) accelerates deep neural networks by keeping weights inside memory arrays and executing dot products in the analog domain. However, modern ACiM accelerators are often limited by the "ADC wall": analog-to-digital converters consume a large fraction of energy and area, while bit-sliced execution repeatedly invokes these converters. Existing designs reduce this cost with low-resolution readout or time multiplexing, but they either lose output fidelity or introduce serialization overhead. Charge-CIM addresses this bottleneck by using switched-capacitor charge redistribution as a unified computing and conversion substrate. The same capacitor fabric performs input conversion, analog MAC, weighted shift-and-add, and readout quantization, reducing both standalone converter overhead and intermediate ADC invocations. A differential readout path further combines paired partial sums during ADC quantization, providing a highly compact and energy-efficient solution for array integration. With dataflow architecture support, we evaluated Charge-CIM on a suite of DNN benchmarks, from CNNs to Transformer models, and experimental results show that Charge-CIM reduces ADC energy by 91.7% under our evaluation setup and improves energy efficiency by 2.7x and throughput by 2.0x compared to the state-of-the-art charge-domain CIM accelerator.

6.4CRJul 20
RRAM-DP: Device-Calibrated Differential Privacy for In-Memory Edge Learning

Kwunhang Wong, Jichang Yang, Karl M. H. Lai et al.

Edge Artificial Intelligence of Things (AIoT) systems often collect sensitive data in situ, raising serious privacy concerns. Resistive-switching random-access memory (RRAM) is an attractive substrate for efficient AIoT thanks to its multi-bit storage and compute-in-memory (CiM) capabilities, while its inherently stochastic write behavior provides a natural source of randomness that can be leveraged for differential privacy (DP) protection. Yet how to transform this device-level randomness-typically viewed as detrimental to accuracy-into a principled randomized mechanism while preserving model utility remains underexplored. We propose RRAM-DP, a hardware-algorithm co-design that relaxes RRAM write-verify operations to inject calibrated noise for inherently (epsilon, delta)-DP with formal DP analysis; together with pretraining techniques, it renders a novel private, high-utility CiM training paradigm. On CIFAR-10/100, STS-B, and SST-2, RRAM-DP-SGD incurs at best only a 3.8% accuracy drop at (epsilon=2, delta=O(1/n))-DP relative to non-private SGD. At the same privacy level, RRAM-DP-SGD delivers up to 57x and 3.2x energy savings and 2.7x and 1.8x speedups over A100 and DiVa-GEMM, respectively. These results point toward efficient, privacy-preserving in-memory training on RRAM at the edge.