Nano-artifact metrics based on random collapse of resist
This addresses the need for clone-resistant authentication in information security applications, though it appears incremental as it builds on existing artifact metrics technology with a specific fabrication improvement.
The researchers tackled the problem of creating secure physical authentication tokens by developing nano-artifact metrics using silicon nanostructures formed through random collapse of resist pillars during electron-beam lithography, achieving a minimum dimension below 10 nm and demonstrating high performance in security metrics such as false match and clone-resistance rates.
Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.