Uniform L $\infty$ estimates for approximate solutions of the bipolar drift-diffusion system
arXiv:1702.063002 citationsh-index: 21
AI Analysis
Provides theoretical guarantees for numerical solutions of a semiconductor device model, but the result is incremental for experts in numerical analysis.
The authors prove uniform L∞ bounds for approximate solutions of the bipolar drift-diffusion system using a discrete Moser iteration, ensuring stability of the Scharfetter-Gummel finite-volume scheme.
We establish uniform L $\infty$ bounds for approximate solutions of the drift-diffusion system for electrons and holes in semiconductor devices, computed with the Schar-fetter-Gummel finite-volume scheme. The proof is based on a Moser iteration technique adapted to the discrete case.