EM-GAN: Fast Stress Analysis for Multi-Segment Interconnect Using Generative Adversarial Networks
This enables rapid full-chip electromigration failure assessment for chip designers, though it is incremental as it applies an existing GAN method to a specific domain problem.
The paper tackles fast stress analysis for multi-segment interconnects in electromigration failure assessment by using a GAN-based method, achieving 6.6% averaged error compared to simulations and orders of magnitude speedup.
In this paper, we propose a fast transient hydrostatic stress analysis for electromigration (EM) failure assessment for multi-segment interconnects using generative adversarial networks (GANs). Our work leverages the image synthesis feature of GAN-based generative deep neural networks. The stress evaluation of multi-segment interconnects, modeled by partial differential equations, can be viewed as time-varying 2D-images-to-image problem where the input is the multi-segment interconnects topology with current densities and the output is the EM stress distribution in those wire segments at the given aging time. Based on this observation, we train conditional GAN model using the images of many self-generated multi-segment wires and wire current densities and aging time (as conditions) against the COMSOL simulation results. Different hyperparameters of GAN were studied and compared. The proposed algorithm, called {\it EM-GAN}, can quickly give accurate stress distribution of a general multi-segment wire tree for a given aging time, which is important for full-chip fast EM failure assessment. Our experimental results show that the EM-GAN shows 6.6\% averaged error compared to COMSOL simulation results with orders of magnitude speedup. It also delivers 8.3X speedup over state-of-the-art analytic based EM analysis solver.