Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection Attacks
This addresses security vulnerabilities in RRAM memory for hardware security applications, but it is incremental as it builds on existing fault injection research.
The paper investigated the sensitivity of TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells in a 250 nm CMOS technology to laser irradiation, finding that optical fault injection can successfully influence the cell states, with a focus on laser parameter selection affecting success rates.
Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation in detail. Experimental results show the feasibility to influence the state of the cells under laser irradiation, i.e. successful optical Fault Injection. We focus on the selection of the parameters of the laser station and their influence on the success of optical Fault Injections.