Lithography Hotspot Detection via Heterogeneous Federated Learning with Local Adaptation
This work solves data scarcity and privacy challenges for design houses in semiconductor manufacturing, though it is incremental as it builds on existing federated learning techniques.
The paper tackles lithography hotspot detection by proposing a heterogeneous federated learning framework that addresses data privacy and heterogeneity issues, achieving high performance and good convergence compared to state-of-the-art methods.
As technology scaling is approaching the physical limit, lithography hotspot detection has become an essential task in design for manufacturability. While the deployment of pattern matching or machine learning in hotspot detection can help save significant simulation time, such methods typically demand for non-trivial quality data to build the model, which most design houses are short of. Moreover, the design houses are also unwilling to directly share such data with the other houses to build a unified model, which can be ineffective for the design house with unique design patterns due to data insufficiency. On the other hand, with data homogeneity in each design house, the locally trained models can be easily over-fitted, losing generalization ability and robustness. In this paper, we propose a heterogeneous federated learning framework for lithography hotspot detection that can address the aforementioned issues. On one hand, the framework can build a more robust centralized global sub-model through heterogeneous knowledge sharing while keeping local data private. On the other hand, the global sub-model can be combined with a local sub-model to better adapt to local data heterogeneity. The experimental results show that the proposed framework can overcome the challenge of non-independent and identically distributed (non-IID) data and heterogeneous communication to achieve very high performance in comparison to other state-of-the-art methods while guaranteeing a good convergence rate in various scenarios.