Memristive Charge-Flux Interaction Still Makes It Possible To Find An Ideal Memristor
This work addresses the fundamental problem of creating an ideal memristor for electronics and computing, though it is incremental as it builds on existing theories and responds to recent critiques.
The paper tackles the challenge of realizing an ideal memristor by demonstrating that direct charge-flux interaction is memristive but suffers from parasitic inductance and bistability, and suggests design improvements like nanoscale structures and magnetic materials to achieve a fully-functioning device.
In 1971, Chua defined an ideal memristor that links charge q and flux phi. In this work, we demonstrated that the direct interaction between physical charge q and physical flux phi is memristive by nature in terms of a time-invariant phi-q curve being nonlinear, continuously differentiable and strictly monotonically increasing. Nevertheless, this structure still suffers from two serious limitations: 1, a parasitic inductor effect, and 2. bistability and dynamic sweep of a continuous resistance range. Then we discussed how to make a fully-functioning ideal memristor with multiple or an infinite number of stable states and no parasitic inductance, and gave a number of suggestions, such as open structure, nanoscale size, magnetic materials with cubic anisotropy (or even isotropy), and sequential switching of the magnetic domains. At last, we responded to a recent challenge from arXiv.org that claims that the structure reported in our retracted JAP paper is simply an inductor with memory since it did not pass their designed capacitor-memristor circuit test. Contrary to their conjecture that an ideal memristor may not exist or may be a purely mathematical concept, we remain optimistic that researchers will discover an ideal memristor in nature or make one in the laboratory.