Enhancing Quantum Memory Lifetime with Measurement-Free Local Error Correction and Reinforcement Learning
This addresses the challenge of reliable quantum computation by reducing error accumulation without mid-circuit readouts, though it appears incremental as it builds on existing LEC concepts with optimization.
The paper tackled the problem of extending quantum memory lifetime by developing a measurement-free local error correction (LEC) circuit optimized with reinforcement learning, achieving better performance than conventional methods in sub-threshold gate error regimes for models like the 2D classical Ising and 4D toric code.
Reliable quantum computation requires systematic identification and correction of errors that occur and accumulate in quantum hardware. To diagnose and correct such errors, standard quantum error-correcting protocols utilize $\textit{global}$ error information across the system obtained by mid-circuit readout of ancillary qubits. We investigate circuit-level error-correcting protocols that are measurement-free and based on $\textit{local}$ error information. Such a local error correction (LEC) circuit consists of faulty multi-qubit gates to perform both syndrome extraction and ancilla-controlled error removal. We develop and implement a reinforcement learning framework that takes a fixed set of faulty gates as inputs and outputs an optimized LEC circuit. To evaluate this approach, we quantitatively characterize an extension of logical qubit lifetime by a noisy LEC circuit. For the 2D classical Ising model and 4D toric code, our optimized LEC circuit performs better at extending a memory lifetime compared to a conventional LEC circuit based on Toom's rule in a sub-threshold gate error regime. We further show that such circuits can be used to reduce the rate of mid-circuit readouts to preserve a 2D toric code memory. Finally, we discuss the application of the LEC protocol on dissipative preparation of quantum states with topological phases.