STRIDe: Cross-Coupled STT-MRAM Enabling Robust In-Memory-Computing for Deep Neural Network Accelerators
This addresses robustness issues in deploying large DNNs on edge platforms using non-volatile memory, offering incremental improvements over standard MRAM designs.
The paper tackles the problem of low distinguishability and robustness in STT-MRAM-based in-memory computing for deep neural networks, proposing STRIDe to achieve up to 8000 current ratio improvement and near-software inference accuracies with up to 70% accuracy gains for binary neural networks.
As deep neural network (DNN) models are growing exponentially in size, their deployment on resource-constrained edge platforms is becoming increasingly challenging. In-memory-computing (IMC) with non-volatile memories (NVMs) has emerged as a potential solution by virtue of its higher energy efficiency compared to standard DNN hardware platforms. Amongst various NVMs, STT-MRAM is highly promising owing to its high endurance and other benefits. However, their IMC implementation is challenging because of their inherently low distinguishability. This issue is exacerbated due to array non-idealities and process-variations, leading to poor IMC robustness and severe inference accuracy degradation. To address this problem, we propose STRIDe - STT-MRAM-based IMC leveraging cross-coupling action to boost the bitcell-level high-to-low current ratio to up to 8000. We propose two flavors of STRIDe designs, both offering robust IMC for inputs and weights in {-1, 1}(XNOR-IMC) and {0, 1}(AND-IMC) regime. Our evaluations for STRIDe arrays show up to 3.86x and 1.77x sense margin (SM) improvement for XNOR-IMC and AND-IMC, respectively, and up to 27.6% read disturb margin (RDM) improvement over standard MRAM-IMC designs. The enhanced robustness of STRIDe translates to near-software inference accuracies (considering crossbar non-idealities and process variations) for ResNet18 BNN and 4-bit DNN trained on CIFAR10 dataset. We observe accuracy improvements of up to 70% (for BNN) and up to 35%(for 4-bit DNN) over standard MRAM designs, albeit with some energy-area-latency penalty.