A Tight Channel-Capacity Lower Bound for the Simultaneous Wireless Information and Power Transfer Integrated Receiver
Provides a more accurate capacity bound for integrated receivers in SWIPT, addressing a gap in the literature that mostly considers separate receivers.
This work provides a tight channel-capacity lower bound for the integrated receiver in simultaneous wireless information and power transfer, using a 4th-order Taylor expansion of the diode's current-voltage characteristic. Numerical results show that the gamma distribution yields a tight bound, and the 4th-order model achieves notably higher capacity than the 2nd-order model.
Contrary to the vast majority of works on simultaneous wireless information and power transfer that provide information-theoretic limits for the separate receiver architecture, in this work we focus on the integrated receiver and provide a channel-capacity lower bound. Towards this, we provide a closed-form tight approximation for the probability transition matrix of the channel by leveraging the 4th-order Taylor expansion of the current-voltage characteristic curve of a Schottky diode used for rectification. Numerical results reveal that the consideration of the gamma distribution as an input distribution leads to a tight channel-capacity lower bound, in contrast to other input distributions, such as the Rayleigh and uniform ones. Furthermore, the results reveal that the consideration of the 4th order term in the Taylor expansion leads to a notably higher capacity with respect to the overly simplified 2nd order term-based model.