Jack Hutchins

LG
h-index6
3papers
21citations
Novelty42%
AI Score31

3 Papers

3.8LGNov 10, 2023
Machine Learning-powered Compact Modeling of Stochastic Electronic Devices using Mixture Density Networks

Jack Hutchins, Shamiul Alam, Dana S. Rampini et al.

The relentless pursuit of miniaturization and performance enhancement in electronic devices has led to a fundamental challenge in the field of circuit design and simulation: how to accurately account for the inherent stochastic nature of certain devices. While conventional deterministic models have served as indispensable tools for circuit designers, they fall short when it comes to capture the subtle yet critical variability exhibited by many electronic components. In this paper, we present an innovative approach that transcends the limitations of traditional modeling techniques by harnessing the power of machine learning, specifically Mixture Density Networks (MDNs), to faithfully represent and simulate the stochastic behavior of electronic devices. We demonstrate our approach to model heater cryotrons, where the model is able to capture the stochastic switching dynamics observed in the experiment. Our model shows 0.82% mean absolute error for switching probability. This paper marks a significant step forward in the quest for accurate and versatile compact models, poised to drive innovation in the realm of electronic circuits.

4.8CLFeb 1, 2024
Redefining "Hallucination" in LLMs: Towards a psychology-informed framework for mitigating misinformation

Elijah Berberette, Jack Hutchins, Amir Sadovnik

In recent years, large language models (LLMs) have become incredibly popular, with ChatGPT for example being used by over a billion users. While these models exhibit remarkable language understanding and logical prowess, a notable challenge surfaces in the form of "hallucinations." This phenomenon results in LLMs outputting misinformation in a confident manner, which can lead to devastating consequences with such a large user base. However, we question the appropriateness of the term "hallucination" in LLMs, proposing a psychological taxonomy based on cognitive biases and other psychological phenomena. Our approach offers a more fine-grained understanding of this phenomenon, allowing for targeted solutions. By leveraging insights from how humans internally resolve similar challenges, we aim to develop strategies to mitigate LLM hallucinations. This interdisciplinary approach seeks to move beyond conventional terminology, providing a nuanced understanding and actionable pathways for improvement in LLM reliability.

4.1LGAug 2, 2025
Embedding-Enhanced Probabilistic Modeling of Ferroelectric Field Effect Transistors (FeFETs)

Tasnia Nobi Afee, Jack Hutchins, Md Mazharul Islam et al.

FeFETs hold strong potential for advancing memory and logic technologies, but their inherent randomness arising from both operational cycling and fabrication variability poses significant challenges for accurate and reliable modeling. Capturing this variability is critical, as it enables designers to predict behavior, optimize performance, and ensure reliability and robustness against variations in manufacturing and operating conditions. Existing deterministic and machine learning-based compact models often fail to capture the full extent of this variability or lack the mathematical smoothness required for stable circuit-level integration. In this work, we present an enhanced probabilistic modeling framework for FeFETs that addresses these limitations. Building upon a Mixture Density Network (MDN) foundation, our approach integrates C-infinity continuous activation functions for smooth, stable learning and a device-specific embedding layer to capture intrinsic physical variability across devices. Sampling from the learned embedding distribution enables the generation of synthetic device instances for variability-aware simulation. With an R2 of 0.92, the model demonstrates high accuracy in capturing the variability of FeFET current behavior. Altogether, this framework provides a scalable, data-driven solution for modeling the full stochastic behavior of FeFETs and offers a strong foundation for future compact model development and circuit simulation integration.